High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

150 150 MIMOS Berhad

Authors:

Rahimah Mohd Saman, Sharaifah Kamariah Wan Sabli , Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Hani and Mohd Ismahadi Syono

 

Abstract:

Graphene’s superior electronic and thermal properties have gained extensive attentionfrom research and industrial sectors to study and develop the material for various applicationssuch as in sensors and diodes. In this paper, the characteristics and performance of carbon-basednanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diodewere investigated for high temperature application. The structure used for this study was siliconsubstrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall(GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemicalvapor deposition (PECVD) method. The TMBS device was then tested to determine the leakagecurrent at 60 V under various temperature settings and compared against a conventional metal-basedTMBS device using TiSi2as a Schottky barrier layer. Current-voltage (I-V) measurement data wereanalyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. FromI-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBSdiodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has highoperating temperature advantages. The Schottky barrier height, ideality factor, and series resistancebased ondV/dln(J)vs.Jfor the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

 

Source:

Applied Sciences 2019; 9, 1587